DMN4031SSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
40V
R DS(ON) max
31m ? @ V GS = 10V
50m ? @ V GS = 4.5V
I D max
T A = +25°C (Note 5)
7.0A
5.6A
?
?
?
?
?
Low On-Resistance
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
? Motor control
? Backlighting
? Power Management Functions
? DC-DC Converters
SO-8
S2
G2
?
?
?
?
?
?
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (approximate)
D1
D2
D2
D2
Top View
S1
G1
Top View
Internal Schematic
D1
D1
G1
S1
N-channel MOSFET
G2
S2
N-channel MOSFET
Ordering Information (Note 4)
Part Number
DMN4031SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
N4031SD = Product Type Marking Code
N4031SD
YY WW
N4031SD
YY WW
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
1 of 6
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料
DMN4034SSD-13 MOSFET 2N-CH 40V 4.8A SO8
DMN4034SSS-13 MOSFET N-CH 40V 5.4A SO8
DMN4036LK3-13 MOSFET N-CH 40V 8.5A DPAK
DMN4060SVT-7 MOSFET N-CH 45V 4.8A TSOT26
DMN4800LSS-13 MOSFET N-CH 30V 9A 8SOP
DMN4800LSSL-13 MOSFET N-CH 30V 8A SO-8
DMN5010VAK-7 MOSFET DUAL N-CH 50V SOT-563
DMN55D0UT-7 MOSFET N-CH 50V 160MA SOT-523
相关代理商/技术参数
DMN4034SSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4034SSD-13 功能描述:MOSFET MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN4034SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4034SSS-13 功能描述:MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN4036LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4036LK3_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4036LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN4040SK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET